Raman scattering study of InGaN grown by metalorganic vapor phase epitaxy on (0001) sapphire substrates

被引：12

作者：

Sugiura, T

Kawaguchi, Y

Tsukamoto, T

Andoh, H

Yamaguchi, M

Hiramatsu, K

Sawaki, N

机构：

[1] Toyota Coll Technol, Dept Elect & Elect Engn, Aichi 4718525, Japan

[2] Nagoya Univ, Dept Elect, Nagoya, Aichi 4648603, Japan

[3] Toyota Coll Technol, Dept Informat & Comp Engn, Aichi 4718525, Japan

[4] Mie Univ, Dept Elect & Elect Engn, Tsu, Mie 5148507, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 10期

关键词：

alloy semiconductor; InGaN; ternary compound; immiscibility; Raman spectroscopy;

D O I：

10.1143/JJAP.40.5955

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the asymmetric broadening of the Raman spectra of InxGa1-xN grown on sapphire substrates with the aid of the spatial correlation model. The asymmetric broadening of the E, phonon mode is enhanced in the region of immiscibility by increasing the indium molar fraction. The correlation length, which corresponds to the decay length of the E-2 phonon mode, was estimated for the first time. It was on the order of 6-10 rim, which is on the same order of magnitude as the size of the columnar structure suggested by transmission electron microscope analyses.

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页码：5955 / 5958

页数：4

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