Analysis of the scattering of electrons by special vibrational modes in a GaAs quantum well with a thin AlAs middle barrier: Mobility modulated by a transversal electric field

The scattering rates for the intra- and intersubband transitions of electrons in a GaAs/AlAs quantum well with a central AlAs thin layer assisted by the emission and absorption of optical phonon modes are calculated in the case where a transversal electric field is applied through the structure in order to modulate the electronic density inside the well. The role of the confined and interface phonon modes in reducing the electron mobility is analyzed separately to permit the identification of the effect of the transversal electric field on this mobility. The electron behavior indicates that electrons of different subbands can be separated in real space by the applied transversal electric field. (C) 1999 American Institute of Physics. [S0021-8979(99)03308-3].