Study of Process Variations on ft in 30 nm Gate Length FinFET Using TCAD Simulations

被引：0

作者：

Lakshmi, B. ^{[1
]}

Srinivasan, R. ^{[1
]}

机构：

[1] SSN Coll Engn, Dept Informat Technol, Madras, Tamil Nadu, India

来源：

COMPUTER NETWORKS AND INFORMATION TECHNOLOGIES | 2011年 / 142卷

关键词：

f(t); FinFET; sensitivity; process variations; TCAD;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper investigates the effect of process variations on unity gain frequency (f(t)) in 30 nm gate length FinFET by performing extensive 3D TCAD simulations. TCAD tools are used to study device sensitivities on process variations. Sensitivity of f(t) on five different process parameters is studied. It is found that f(t) is more sensitive to gate length, underlap and corner radius, and less sensitive to hardmask height. Sensitivity of f(t) to fin width depends upon channel doping levels.

引用

页码：482 / 486

页数：5

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