Selective GaN epitaxy on Si(111) substrates using porous aluminum oxide buffer layers

被引：5

作者：

Napierala, J ^{[1
]}

Bühlmann, HJ ^{[1
]}

Ilegems, M ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2006年 / 153卷 / 02期

关键词：

D O I：

10.1149/1.2138571

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Epitaxial GaN layers were grown by metallorganic vapor phase epitaxy on Si(111) substrates by using aluminum oxide (AlOx) buffer layers. The AlOx was obtained by anodic oxidation of an evaporated Al film. High-resolution X-ray diffraction and room temperature photoluminescence measurements were used to investigate the grown GaN layers. Epi-growth of GaN on the AlOx stripes was shown to be possible, while no growth took place on the neighboring Si surface, hereby demonstrating perfect selectivity. (c) 2005 The Electrochemical Society.

引用

页码：G125 / G127

页数：3

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