Giant Room-Temperature Magnetodielectric Response in a MOF at 0.1 Tesla

被引:38
作者
Chen, Li-Hong [1 ,2 ]
Guo, Jiang-Bin [1 ,2 ]
Wang, Xuan [1 ,2 ]
Dong, Xin-Wei [3 ,4 ]
Zhao, Hai-Xia [1 ,2 ]
Long, La-Sheng [1 ,2 ]
Zheng, Lan-Sun [1 ,2 ]
机构
[1] Xiamen Univ, Collaborat Innovat Ctr Chem Energy Mat, State Key Lab Phys Chem Solid Surfaces, Xiamen 361005, Peoples R China
[2] Xiamen Univ, Dept Chem, Coll Chem & Chem Engn, Xiamen 361005, Peoples R China
[3] Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China
[4] Xiamen Univ, Inst Theoret Phys & Astrophys, Xiamen 361005, Peoples R China
基金
中国国家自然科学基金;
关键词
electron hopping; magnetodielectric; MOF; METAL-ORGANIC FRAMEWORK; M-II; LUFE2O4; FERROELECTRICITY; BEHAVIOR; ZN; MN; FE;
D O I
10.1002/adma.201702512
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A giant room-temperature magnetodielectric (MD) response upon the application of a small magnetic field is of fundamental importance for the practical application of a new generation of devices. Here, the giant room-temperature magnetodielectric response is demonstrated in the metal-organic framework (MOF) of [NH2(CH3)(2)](n)[ (FeFeII)-Fe-III (1-x) Ni-II (x)(HCOO)(6)](n) (x approximate to 0.63-0.69) (1) with its MD coefficient remaining between -20% and -24% in the 300-410 K temperature range, even at 0.1 T. Because a room-temperature magnetodielectric response has never been observed in MOFs, the present work not only provides a new type of magnetodielectric material but also takes a solid step toward the practical application of MOFs in a new generation of devices.
引用
收藏
页数:6
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