Growth and characterization of phosphor-free white light-emitting diodes based on InGaN blue quantum wells and green-yellow quantum dots

被引：12
作者：
Yang, Di [1 ]
Wang, Lai [1 ]
Lv, Wen-Bin [1 ]
Hao, Zhi-Biao [1 ]
Luo, Yi [1 ]
机构：
[1] Tsinghua Univ, Dept Elect Engn, Tsinghua Natl Lab Informat Sci & Technol, Beijing 100084, Peoples R China
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2015年 / 82卷
基金：
中国国家自然科学基金;
关键词：
GaN; InGaN; Quantum dots; Phosphor-free; White LED; ELECTROLUMINESCENCE; POLARIZATION; INJECTION; LEDS;
D O I：
10.1016/j.spmi.2015.02.005
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Phosphor-free white light-emitting diodes consisting of 4 layers of InGaN/GaN quantum dots and 4 layers of quantum wells have been grown by metal organic chemical vapor deposition. A white emission was demonstrated under electrical injection by mixing the green-yellow light from quantum dots and the blue light from quantum wells. At the injection current of 5 mA, the electroluminescence peak wavelengths of quantum dots and quantum wells were 548 nm and 450 nm, respectively, resulting in the color-rendering index Ra of 62. As the injection current increased, a faster emission enhancement of quantum well and an emission blue shift of the quantum dots were observed, which led to the decrease of Ra. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码：26 / 32
页数：7
相关论文
共 39 条
[1]  
[Anonymous], 2000, BLUE LASER DIODE COM
[2]   Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures [J].
Barletta, Philip T. ;
Berkman, E. Acar ;
Moody, Baxter F. ;
El-Masry, Nadia A. ;
Emara, Ahmed M. ;
Reed, Mason J. ;
Bedair, S. M. .
APPLIED PHYSICS LETTERS, 2007, 90 (15)
[3]   Spontaneous polarization and piezoelectric constants of III-V nitrides [J].
Bernardini, F ;
Fiorentini, V ;
Vanderbilt, D .
PHYSICAL REVIEW B, 1997, 56 (16) :10024-10027
[4]   Tunneling injection lasers: A new class of lasers with reduced hot carrier effects [J].
Bhattacharya, P ;
Singh, J ;
Yoon, H ;
Zhang, XK ;
GutierrezAitken, A ;
Lam, YL .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1996, 32 (09) :1620-1629
[5]  
Bhattacharya P., 2010, APPL PHYS LETT, V97
[6]   Nitride-based cascade near white light-emitting diodes [J].
Chen, CH ;
Chang, SJ ;
Su, YK ;
Sheu, JK ;
Chen, JF ;
Kuo, CH ;
Lin, YC .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (07) :908-910
[7]   Carrier distribution in (0001)InGaN/GaN multiple quantum well light-emitting diodes [J].
David, Aurelien ;
Grundmann, Michael J. ;
Kaeding, John F. ;
Gardner, Nathan F. ;
Mihopoulos, Theodoros G. ;
Krames, Michael R. .
APPLIED PHYSICS LETTERS, 2008, 92 (05)
[8]   Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays [J].
DenBaars, Steven P. ;
Feezell, Daniel ;
Kelchner, Katheryn ;
Pimputkar, Siddha ;
Pan, Chi-Chen ;
Yen, Chia-Chen ;
Tanaka, Shinichi ;
Zhao, Yuji ;
Pfaff, Nathan ;
Farrell, Robert ;
Iza, Mike ;
Keller, Stacia ;
Mishra, Umesh ;
Speck, James S. ;
Nakamura, Shuji .
ACTA MATERIALIA, 2013, 61 (03) :945-951
[9]   Wavelength-stable cyan and green light emitting diodes on nonpolar m-plane GaN bulk substrates [J].
Detchprohm, Theeradetch ;
Zhu, Mingwei ;
Li, Yufeng ;
Zhao, Liang ;
You, Shi ;
Wetzel, Christian ;
Preble, Edward A. ;
Paskova, Tanya ;
Hanser, Drew .
APPLIED PHYSICS LETTERS, 2010, 96 (05)
[10]   Self-assembled InGaN quantum dots on GaN emitting at 520 nm grown by metalorganic vapor-phase epitaxy [J].
Ee, Yik-Khoon ;
Zhao, Hongping ;
Arif, Ronald A. ;
Jamil, Muhammad ;
Tansu, Nelson .
JOURNAL OF CRYSTAL GROWTH, 2008, 310 (7-9) :2320-2325
1234