High-frequency, 6.2 Å pN heterojunction diodes

被引：1
|
作者：
Champlain, James G. [1 ]
Magno, Richard [1 ]
Park, Doewon [1 ]
Newman, Harvey S. [1 ]
Boos, J. Brad [1 ]
机构：
[1] USN, Elect Sci & Technol Div, Res Lab, Washington, DC 20375 USA
来源：
SOLID-STATE ELECTRONICS | 2012年 / 67卷 / 01期
关键词：
Semiconductor devices; Diodes; Mixers; Frequency conversion; COMPOUND SEMICONDUCTORS; ELECTRONIC DEVICES; OHMIC CONTACTS; LOW-RESISTANCE; ALLOYS;
D O I：
10.1016/j.sse.2011.07.010
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Sb-based pN heterojunction diodes at 6.2 angstrom, consisting of narrow bandgap p-type In(0.27)Ga(0.73)Sb and wide bandgap n-type In(0.69)Al(0.41)As(0.41)Sb(0.59), have been fabricated and measured. These diodes show excellent electrical characteristics with an ideality factor of 1.2 and high current density. S-parameter measurements and subsequent analysis show that these diodes have RC-cutoff frequencies over 1 THz, making these diodes excellent choices for high-frequency applications, such as sub-harmonic mixers for frequency conversion. Published by Elsevier Ltd.
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页码：105 / 108
页数：4
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