Oxygen-enhanced wet thermal oxidation of GaAs

被引：10

作者：

Bauters, J. F. ^{[1
]}

Fenlon, R. E. ^{[1
]}

Seibert, C. S. ^{[1
]}

Yuan, W. ^{[1
]}

Plunkett, J. S. B. ^{[1
]}

Li, J. ^{[1
]}

Hall, D. C. ^{[1
]}

机构：

[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 14期

基金：

美国国家科学基金会;

关键词：

current density; gallium arsenide; III-V semiconductors; leakage currents; molecular beam epitaxial growth; MOS capacitors; oxidation; surface roughness; thin films; ALGAAS; HETEROSTRUCTURES; ALXGA1-XAS;

D O I：

10.1063/1.3647579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An oxygen-enhanced wet thermal oxidation process is used to grow smooth, uniform, insulating native oxides of GaAs. At 420 degrees C, a maximum linear growth rate of 4.8 nm/min is observed for oxidation in water vapor with 2000 ppm O-2 added relative to the N-2 carrier gas, with growth ceasing by 7000 ppm. Films as thick as 800 nm with surface roughness as low as 0.2 nm are demonstrated. In fabricated metal-oxide-semiconductor capacitors, a 412 nm thick native oxide film exhibits a factor of similar to 2700 reduction in leakage current density at 1 V relative to a direct metal (Au:Ti) to GaAs contact. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3647579]

引用

页数：3

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