On the chemistry of a-SiO2 deposition by plasma enhanced CVD

被引：5

作者：

Wickramanayaka, S ^{[1
]}

Nakanishi, Y ^{[1
]}

Hatanaka, Y ^{[1
]}

机构：

[1] SHIZUOKA UNIV, ELECT RES INST, HAMAMATSU, SHIZUOKA 432, JAPAN

来源：

APPLIED SURFACE SCIENCE | 1997年 / 113卷

关键词：

TEOS; TICS; plasma enhanced CVD;

D O I：

10.1016/S0169-4332(96)00798-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The chemistry in depositing a-SiO2 using tetraethoxysilane, Si(OC2H5)(4), (TEOS) and tetraisocyanatesilane, Si(NCO)(4), (TICS) with an oxidant is comparatively studied. In both cases, absorption and desorption reactions of intermediate precursors are seen to be dominant. TEOS/O-2 chemistry, where there is no N atom in the source gas, yields conformal step coverage over patterned surfaces. The precursor or precursors generated in TICS/O-2 chemistry are expected to contain N atom or atoms and have no surface migration property. The N atom in the precursor is believed to limit the surface migration property. This results in an uneven step coverage over patterned surfaces similar to that of SiH4/O-2 chemistry.

引用

页码：670 / 674

页数：5

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