Analysis of strained nitride quantum dots as threading dislocation filters

被引：5

作者：

Ye, Han ^{[1
]}

Lu, Pengfei ^{[1
]}

Yu, Zhongyuan ^{[1
]}

Zhou, Shuai ^{[1
]}

Liu, Yumin ^{[1
]}

机构：

[1] Beijing Univ Posts & Telecommun, Key Lab Informat Photon & Opt Commun, Minist Educ, Beijing 100876, Peoples R China

来源：

SOLID STATE SCIENCES | 2011年 / 13卷 / 09期

基金：

国家高技术研究发展计划(863计划); 中国国家自然科学基金;

关键词：

Dislocation filter; Quantum dot; Finite element; Nitride semiconductor; LIGHT-EMITTING-DIODES; FINITE-ELEMENT-METHOD; CRITICAL THICKNESS; STRESS-RELAXATION; MISMATCHED LAYERS; ALGAN; PERFORMANCE; EMISSION;

D O I：

10.1016/j.solidstatesciences.2011.07.012

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

A finite element model is proposed to quantitatively predict the critical condition for a nitride quantum dot to bend threading dislocation to interfacial misfit dislocation. The energy balance approach adopted is based on the elastic residual strain energy and non-elastic dislocation core energy. We find that the critical misfit, beyond which the inclination of threading dislocation is energetically favorable, depends strongly on the shape, size and aspect ratio. The results provide guidelines for the design of quantum dot dislocation filter. (C) 2011 Elsevier Masson SAS. All rights reserved.

引用

页码：1809 / 1812

页数：4

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