Internal stress control of transition-metal thin films

被引:0
|
作者
Toyoda, R. [1 ]
Tawata, M. [2 ]
Hashimoto, M. [3 ]
Matsumura, Y. [1 ]
机构
[1] Tokai Univ, Grad Sch Engn, Dept Appl Sci, Hiratsuka, Kanagawa 2591292, Japan
[2] Tokai Univ, Sch Engn, Dept Mech Engn, Hiratsuka, Kanagawa 2591292, Japan
[3] Tokai Univ, Sch Engn, Dept Nucl Engn, Hiratsuka, Kanagawa 2591292, Japan
基金
日本学术振兴会;
关键词
Sputtered thin film; Ion bombardment; Ion momentum; Internal stress; ION-BOMBARDMENT; MAGNETOSTRICTIVE PROPERTIES;
D O I
10.1179/1432891714Z.0000000001103
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The characteristics of sputtered thin films are affected by ion bombardment during sputter deposition. An ion bombardment parameter Pi, which is based on the magnitude of the ion momentum and the impingement ratio of ions to metal particles, has been previously proposed as a means of expressing the effects of ion bombardment. In this study, the effects of ion bombardment parameter P-i on the internal stress of thin films were evaluated. Consequently, the internal stress of Ni and Cu thin films were observed to increase linearly with the increase of P-i; however, a Mo thin film exhibited the converse result. The results presented herein indicate that the characteristics of thin films, irrespective of the target, can be controlled via manipulation of parameter P-i.
引用
收藏
页码:325 / 327
页数:3
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