An 18-Gb/s Fully Integrated Optical Receiver With Adaptive Cascaded Equalizer

被引:25
作者
Pan, Quan [1 ,2 ]
Wang, Yipeng [1 ]
Lu, Yan [1 ,3 ]
Yue, C. Patrick [1 ]
机构
[1] Hong Kong Univ Sci & Technol, Elect & Comp Engn Dept, Hong Kong, Hong Kong, Peoples R China
[2] eTopus Technol Inc, Sunnyvale, CA 94085 USA
[3] Univ Macau, State Key Lab Analog & Mixed Signal VLSI, Zhuhai, Guangdong, Peoples R China
关键词
Optoelectronic integrated circuits; optical receivers; silicon photodetector; inverter-based cascode transimpedance amplifier; low dropout regulator; DC offset cancellation; continuous-time linear equalizer (CTLE); adaptive equalizer; limiting amplifier (LA); OPTOELECTRONIC RECEIVER; STANDARD CMOS; PHOTODETECTOR; DETECTOR;
D O I
10.1109/JSTQE.2016.2574567
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An 18-Gb/s fully integrated optoelectronic integrated circuit for short-distance communications is realized in the TSMC 65-nm CMOS process. The system consists of a CMOS on-chip photodetector, an inverter-based cascode transimpedance amplifier, a DC offset cancellation buffer, a main amplifier, a three-stage tunable continuous-time linear equalizer, a two-stage modified limiting amplifier, a DC offset cancellation network, an adaptive equalization loop, a low dropout regulator, and a 50-Omega termination output buffer. The CMOS P-Well/Deep N-Well on-chip photodetector improves bandwidth and responsivity without technology modification. Moreover, the adaptive cascaded equalization further compensates for the limited bandwidth of the on-chip photodetector with a 5-10-dB/dec roll-up frequency response. The electrical measurement results show a transimpedance gain of 102 dB Omega and a bandwidth of 12.5 GHz. Furthermore, the optical measurement results demonstrate a fully integrated solution with (1) standard mode: data traffic of 9 Gb/s for 2(15)-1 PRBS with 10(-12) BER, -4.2-dBm optical input sensitivity, and 5.33-pJ/b efficiency; (2) avalanche mode: data traffic of 18 Gb/s for 2(15)-1 PRBS with 10(-12) BER, -4.9-dBm optical input sensitivity, and 2.7-pJ/b efficiency. The chip occupies a core area of 0.23 mm(2) and dissipates 48 mW from a 1/1.2-V voltage supply.
引用
收藏
页码:361 / 369
页数:9
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