Intrinsic Reliability Study in Low-k Dielectrics with Co Metallurgy in 10nm Process

被引：1
|
作者：
Zhang, G. W. [1 ]
Palmer, J. [1 ]
Kasim, R. [1 ]
Lin, C-Y [1 ]
Perini, C. [1 ]
Weber, J. R. [2 ]
Kencke, D. [2 ]
Madhavan, A. [3 ]
机构：
[1] Intel Corp, Qual & Reliabil, Hillsboro, OR 97124 USA
[2] Intel Corp, TCAD, Hillsboro, OR USA
[3] Intel Corp, Log Technol Dev, Hillsboro, OR USA
来源：
2020 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE (IITC) | 2020年
关键词：
TDDB reliability; Low-k; Cobalt (Co); Conduction mechanism; Schottky Emission (SE); Poole-Frenkel (PF); Fowler-Nordheim(FN); Triangular Voltage Sweep(TVS); TCAD;
D O I：
10.1109/IITC47697.2020.9515670
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper focuses on the study of Co/Low-k dielectric TDDB (Time Dependent Dielectric Breakdown) in Intel's 10nm process technology. We demonstrate that 36nm/40nm pitch Cobalt interconnects with Low-k dielectric successfully meet our technology TDDB reliability goals. Furthermore, extensive study of the leakage mechanisms, including TCAD modelling, indicates that the dominant conduction mechanism in Co/Low-k is Schottky Emission (SE), with some contribution from Fowler Nordheim (FN) at high E-field. Characterization using Triangular Voltage Sweep (TVS) with Constant Voltage TDDB does not show metallic ion-related peaks. These results support that Co/Low-k interconnect reliability is limited by the intrinsic breakdown of the dielectric material, with no evidence of Co ion migration in Intel 10nm process.
引用
收藏
页码：124 / 126
页数：3
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