High-Quality Black Phosphorus Atomic Layers by Liquid-Phase Exfoliation

被引:769
作者
Yasaei, Poya [1 ]
Kumar, Bijandra [1 ]
Foroozan, Tara [2 ]
Wang, Canhui [3 ]
Asadi, Mohammad [1 ]
Tuschel, David [4 ]
Indacochea, J. Ernesto [2 ]
Klie, Robert F. [3 ]
Salehi-Khojin, Amin [1 ]
机构
[1] Univ Illinois, Dept Mech & Ind Engn, Chicago, IL 60607 USA
[2] Univ Illinois, Dept Civil & Mat Engn, Chicago, IL 60607 USA
[3] Univ Illinois, Dept Phys, Chicago, IL 60607 USA
[4] HORIBA Sci Inc, Edison, NJ 08820 USA
基金
美国国家科学基金会;
关键词
GRAPHENE; OPTOELECTRONICS; MOBILITY; SENSORS;
D O I
10.1002/adma.201405150
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Recent isolation of black phosphorus atomic layers (known as phosphorene) has revealed its great potential for use as an alternative 2D semiconductor in many areas of electronics and optoelectronics. Liquid-phase exfoliation is utilized to produce high-quality black phosphorus nanoflakes with thicknesses down to a monolayer in the form of uniform and stable dispersions, allowing for pace toward practical applications.
引用
收藏
页码:1887 / +
页数:7
相关论文
共 34 条
[1]   Robust carbon dioxide reduction on molybdenum disulphide edges [J].
Asadi, Mohammad ;
Kumar, Bijandra ;
Behranginia, Amirhossein ;
Rosen, Brian A. ;
Baskin, Artem ;
Repnin, Nikita ;
Pisasale, Davide ;
Phillips, Patrick ;
Zhu, Wei ;
Haasch, Richard ;
Klie, Robert F. ;
Kral, Petr ;
Abiade, Jeremiah ;
Salehi-Khojin, Amin .
NATURE COMMUNICATIONS, 2014, 5
[2]   Production of few-layer phosphorene by liquid exfoliation of black phosphorus [J].
Brent, Jack R. ;
Savjani, Nicky ;
Lewis, Edward A. ;
Haigh, Sarah J. ;
Lewis, David J. ;
O'Brien, Paul .
CHEMICAL COMMUNICATIONS, 2014, 50 (87) :13338-13341
[3]   Isolation and characterization of few-layer black phosphorus [J].
Castellanos-Gomez, Andres ;
Vicarelli, Leonardo ;
Prada, Elsa ;
Island, Joshua O. ;
Narasimha-Acharya, K. L. ;
Blanter, Sofya I. ;
Groenendijk, Dirk J. ;
Buscema, Michele ;
Steele, Gary A. ;
Alvarez, J. V. ;
Zandbergen, Henny W. ;
Palacios, J. J. ;
van der Zant, Herre S. J. .
2D MATERIALS, 2014, 1 (02)
[4]   Intrinsic and extrinsic performance limits of graphene devices on SiO2 [J].
Chen, Jian-Hao ;
Jang, Chaun ;
Xiao, Shudong ;
Ishigami, Masa ;
Fuhrer, Michael S. .
NATURE NANOTECHNOLOGY, 2008, 3 (04) :206-209
[5]   Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials [J].
Coleman, Jonathan N. ;
Lotya, Mustafa ;
O'Neill, Arlene ;
Bergin, Shane D. ;
King, Paul J. ;
Khan, Umar ;
Young, Karen ;
Gaucher, Alexandre ;
De, Sukanta ;
Smith, Ronan J. ;
Shvets, Igor V. ;
Arora, Sunil K. ;
Stanton, George ;
Kim, Hye-Young ;
Lee, Kangho ;
Kim, Gyu Tae ;
Duesberg, Georg S. ;
Hallam, Toby ;
Boland, John J. ;
Wang, Jing Jing ;
Donegan, John F. ;
Grunlan, Jaime C. ;
Moriarty, Gregory ;
Shmeliov, Aleksey ;
Nicholls, Rebecca J. ;
Perkins, James M. ;
Grieveson, Eleanor M. ;
Theuwissen, Koenraad ;
McComb, David W. ;
Nellist, Peter D. ;
Nicolosi, Valeria .
SCIENCE, 2011, 331 (6017) :568-571
[6]   Ambipolar Phosphorene Field Effect Transistor [J].
Das, Saptarshi ;
Demarteau, Marcel ;
Roelofs, Andreas .
ACS NANO, 2014, 8 (11) :11730-11738
[7]   Tunable Transport Gap in Phosphorene [J].
Das, Saptarshi ;
Zhang, Wei ;
Demarteau, Marcel ;
Hoffmann, Axel ;
Dubey, Madan ;
Roelofs, Andreas .
NANO LETTERS, 2014, 14 (10) :5733-5739
[8]  
Favron A., 2014, ARXIV14080345CONDMAT
[9]   Measurement of mobility in dual-gated MoS2 transistors [J].
Fuhrer, Michael S. ;
Hone, James .
NATURE NANOTECHNOLOGY, 2013, 8 (03) :146-147
[10]   The rise of graphene [J].
Geim, A. K. ;
Novoselov, K. S. .
NATURE MATERIALS, 2007, 6 (03) :183-191