Giant self-induced transparency of intense few-cycle terahertz pulses in n-doped silicon

被引：25

作者：

Chefonov, O. V. ^{[1
]}

Ovchinnikov, A. V. ^{[1
]}

Romashevskiy, S. A. ^{[1
]}

Chai, X. ^{[2
]}

Ozaki, T. ^{[2
]}

Savel'ev, A. B. ^{[3
]}

Agranat, M. B. ^{[1
]}

Fortov, V. E. ^{[1
]}

机构：

[1] Russian Acad Sci, Joint Inst High Temp, Izhorskaya 13,Bd 2, Moscow 125412, Russia

[2] Adv Laser Light Source, INRS EMT, Varennes, PQ J3X 1S2, Canada

[3] Lomonosov Moscow State Univ, Moscow 119991, Russia

来源：

OPTICS LETTERS | 2017年 / 42卷 / 23期

基金：

俄罗斯科学基金会;

关键词：

THZ; SPECTROSCOPY; GENERATION; ABSORPTION; DSTMS; LASER; GAAS;

D O I：

10.1364/OL.42.004889

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The results of high-field terahertz transmission experiments on n-doped silicon (carrier concentration of 8.7x10(16)cm(-3)) are presented. We use terahertz pulses with electric field strengths up to 3.1 MVcm(-1) and a pulse duration of 700 fs. A huge transmittance enhancement of similar to 90 times is observed with increasing of the terahertz electric field strengths within the range of 1.5-3.1 MVcm(-1). (C) 2017 Optical Society of America

引用

页码：4889 / 4892

页数：4

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