Giant self-induced transparency of intense few-cycle terahertz pulses in n-doped silicon

被引：24
作者：
Chefonov, O. V. [1 ]
Ovchinnikov, A. V. [1 ]
Romashevskiy, S. A. [1 ]
Chai, X. [2 ]
Ozaki, T. [2 ]
Savel'ev, A. B. [3 ]
Agranat, M. B. [1 ]
Fortov, V. E. [1 ]
机构：
[1] Russian Acad Sci, Joint Inst High Temp, Izhorskaya 13,Bd 2, Moscow 125412, Russia
[2] Adv Laser Light Source, INRS EMT, Varennes, PQ J3X 1S2, Canada
[3] Lomonosov Moscow State Univ, Moscow 119991, Russia
来源：
OPTICS LETTERS | 2017年 / 42卷 / 23期
基金：
俄罗斯科学基金会;
关键词：
THZ; SPECTROSCOPY; GENERATION; ABSORPTION; DSTMS; LASER; GAAS;
D O I：
10.1364/OL.42.004889
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The results of high-field terahertz transmission experiments on n-doped silicon (carrier concentration of 8.7x10(16)cm(-3)) are presented. We use terahertz pulses with electric field strengths up to 3.1 MVcm(-1) and a pulse duration of 700 fs. A huge transmittance enhancement of similar to 90 times is observed with increasing of the terahertz electric field strengths within the range of 1.5-3.1 MVcm(-1). (C) 2017 Optical Society of America
引用
收藏
页码：4889 / 4892
页数：4
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