Franz-Keldysh Effect in GeSn Detectors

被引：3

作者：

Bechler, S. ^{[1
]}

Oehme, M. ^{[1
]}

Latzel, O. ^{[1
]}

Schmid, M. ^{[1
]}

Kostecki, K. ^{[1
]}

Koerner, R. ^{[1
]}

Gollhofer, M. ^{[1
]}

Kasper, E. ^{[1
]}

Schulze, J. ^{[1
]}

机构：

[1] Univ Stuttgart, Inst Semicond Engn, D-70569 Stuttgart, Germany

来源：

SIGE, GE, AND RELATED COMPOUNDS 6: MATERIALS, PROCESSING, AND DEVICES | 2014年 / 64卷 / 06期

关键词：

PHOTODETECTORS; SILICON; SN;

D O I：

10.1149/06406.0383ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Four different GeSn photodetectors with Sn content up to 5.6 % are investigated. From current-voltage measurements with and without illumination, the spectral optical responsivity is determined. With the responsivity and the measured reflection, the absorption and the direct band gap energies are calculated. All four samples show a voltage dependent change of the absorption due to the Franz-Keldysh effect. At a wavelength of 1950 nm, a maximum absorption ratio of 2 is observed for 4.2 % Sn for a voltage swing of 2.5 V.

引用

页码：383 / 390

页数：8

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