Interface formation and defect structures in epitaxial La2Zr2O7 thin films on (111)Si

被引：68

作者：

Seo, JW ^{[1
]}

Fompeyrine, J

Guiller, A

Norga, G

Marchiori, C

Siegwart, H

Locquet, JP

机构：

[1] Ecole Polytech Fed Lausanne, Inst Phys Complex Matters, CH-1015 Lausanne, Switzerland

[2] IBM Res Corp, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 25期

关键词：

D O I：

10.1063/1.1635966

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the growth of epitaxial La2Zr2O7 thin films on (111) Si. Although the interface structure can be strongly affected by the Si oxidation during the deposition process, epitaxial growth of La2Zr2O7 was obtained. A detailed study by means of transmission electron microscopy reveals two types of structures (pyrochlore and fluorite) with the same average chemical composition but strong differences in reactivity and interface formation. The structural complexity of the ordered pyrochlore structure seems to prevent excess oxygen diffusion and interfacial SiO2 formation. (C) 2003 American Institute of Physics.

引用

页码：5211 / 5213

页数：3

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