Limits to doping in oxides

被引：259
作者：
Robertson, J. [1 ]
Clark, S. J. [2 ]
机构：
[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England
[2] Univ Durham, Dept Phys, Durham DH1 3HP, England
来源：
PHYSICAL REVIEW B | 2011年 / 83卷 / 07期
关键词：
SCHOTTKY-BARRIER HEIGHTS; BAND OFFSETS; ELECTRICAL-CONDUCTION; ELECTRONIC-STRUCTURE; GATE OXIDES; II-VI; SEMICONDUCTORS; FILMS;
D O I：
10.1103/PhysRevB.83.075205
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The chemical trends of limits to doping of many semiconducting metal oxides is analyzed in terms of the formation energies needed to form the compensating defects. The n-type oxides are found to have high electron affinities and charge neutrality levels that lie in midgap or the upper part of their gap, whereas p-type oxides have small photoionization potentials and charge neutrality levels lying in the lower gap. The doping-limit energy range is found to vary with the bulk free energy of the compound.
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