Study on carrier lifetimes in InGaN multi-quantum well with different barriers by time-resolved photoluminescence

被引：8
作者：
Wang, Lai [1 ]
Xing, Yuchen [1 ]
Hao, Zhibiao [1 ]
Luo, Yi [1 ]
机构：
[1] Tsinghua Univ, Dept Elect Engn, Tsinghua Natl Lab Informat Sci & Technol, Beijing 100084, Peoples R China
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2015年 / 252卷 / 05期
基金：
中国国家自然科学基金;
关键词：
carrier localization; charge-carrier lifetimes; InGaN; multi-quantum wells; time-resolved photoluminescence; LIGHT-EMITTING-DIODES; QUANTUM-WELL; LASER-DIODES; BLUE; SEMICONDUCTORS; STRAIN; GREEN;
D O I：
10.1002/pssb.201451511
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The carrier lifetimes depending on emission photo energy of InGaN multi-quantum well (MQW) with different barriers are studied by time-resolved photoluminescence (TRPL). A two-exponential decay process is observed for the high-energy photons. This is explained by there being two types of carrier localization centers (LCs), shallow localization centers (SLCs), and deep localization centers (DLCs), in InGaN quantum wells. The radiative recombination efficiency (RRE) of a quantum well is mainly determined by carrier dynamics in the DLCs. Compared to the conventional InGaN/GaN MQW, the MQW with the first barrier of 60-nm In0.01Ga0.99N, has the smaller and denser DLCs, and hence the higher RRE, and for the MQW with all the barriers of In0.02Ga0.98N, the average and total area of DLCs both become larger. It can maintain the similar RRE but much shorter carrier lifetime of tens of ns in DLCs. It is considered that the state of LCs is strongly dependent on the strain in MQW. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：956 / 960
页数：5
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