Germanium electron-hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate

被引：13

作者：

Jeong, Woo Jin ^{[1
]}

Kim, Tae Kyun ^{[1
]}

Moon, Jung Min ^{[1
]}

Park, Min Gyu ^{[1
]}

Yoon, Young Gwang ^{[1
]}

Hwang, Byeong Woon ^{[1
]}

Choi, Woo Young ^{[2
]}

Shin, Mincheol ^{[1
]}

Lee, Seok-Hee ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305764, South Korea

[2] Sogang Univ, Dept Elect Engn, Seoul 121743, South Korea

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2015年 / 30卷 / 03期

关键词：

band-to-band tunneling; fin field effect transistor; electron-hole bilayer; steep subthreshold; lightly-doped drain-source; ENERGY;

D O I：

10.1088/0268-1242/30/3/035021

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A germanium tunnel field-effect transistor (TFET) with a bias-induced electron-hole bilayer (EHB) with double gates that are symmetrically arranged and independently biased is simulated. The symmetric double gate scheme is feasible, presenting a simple EHB-TFET structure that is practicable for industrial fabrication. According to simulation results, the improvement of on/off current ratio of similar to 10(8) is achieved by inserting a lightly-doped drain-source (LDD) region. Also, fin-type EHB-TFETs show an extremely low average sub-threshold swing of 11 mV/decade over 4 decades at V-DD = 0.5 V, and thus are suitable for ultra-low power applications.

引用

页数：5

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