Stress effect on suspended polycrystalline silicon membranes fabricated by micromachining of porous silicon

被引：19
|
作者：
Kaltsas, G
Nassiopoulou, AG
Siakavellas, M
Anastassakis, E
机构：
[1] NCSR Demokritos, Inst Microelect, GR-15310 Athens, Greece
[2] Natl Tech Univ Athens, Dept Phys, GR-15780 Athens, Greece
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 1998年 / 68卷 / 1-3期
关键词：
micromachining; porous silicon; suspended membranes; stress effect;
D O I：
10.1016/S0924-4247(98)00063-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Large polycrystalline silicon membranes in the form of bridges suspended over deep monocrystalline silicon cavities have been fabricated by using porous silicon as a sacrificial layer. Stresses within the free-standing membranes as well as within supported polycrystalline membranes (pads) are measured through micro-Raman spectroscopy and a different model is used in each case in order to calculate the stresses from the observed Raman shifts. A detailed study of stress distribution along the membranes and pads has been performed, as a function of thickness and annealing treatment. The stress profiles reveal variations in stress along the membranes and pads. (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：429 / 434
页数：6
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