Magnetic susceptibility and microstructure of hydrogenated amorphous silicon measured by nuclear magnetic resonance on a single thin film

被引：19

作者：

Baugh, J ^{[1
]}

Han, DX ^{[1
]}

Kleinhammes, A ^{[1
]}

Wu, Y ^{[1
]}

机构：

[1] Univ N Carolina, Dept Phys & Astron, Chapel Hill, NC 27599 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 04期

关键词：

D O I：

10.1063/1.1341217

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A nuclear magnetic resonance technique for precisely measuring the bulk magnetic susceptibility of micron-thick hydrogenated amorphous silicon (a-Si:H) film is introduced. The large disorder-induced diamagnetic enhancement exhibited by a-Si:H is shown to provide a sensitive bulk measurement for detecting variations in structural order in a-Si:H films. Furthermore, this approach is shown to be effective in revealing the details of microstructure in a-Si:H, including the presence of microstructural anisotropy. (C) 2001 American Institute of Physics.

引用

页码：466 / 468

页数：3

共 17 条

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