Forming-free, ultra-high on-state current, and self-compliance selector based on titanium-doped NbOx thin films

被引：22
作者：
Chen, Dalei [1 ,2 ,3 ]
Chen, Ao [1 ,2 ,3 ]
Yu, Zhiying [1 ,2 ,3 ]
Zhang, Ziqi [1 ,2 ,3 ]
Tan, Qiuyang [1 ,2 ,3 ]
Zeng, Junpeng [1 ,2 ,3 ]
Ji, Jie [1 ,2 ,3 ]
Pan, Xiyan [1 ,2 ,3 ]
Ma, Guokun [1 ,2 ,3 ]
Wan, Houzhao [1 ,2 ,3 ]
Rao, Yiheng [1 ,2 ,3 ]
Tao, Li [1 ,2 ,3 ]
Peng, Xiaoniu [1 ,2 ,3 ]
Duan, Jinxia [1 ,2 ,3 ]
Wang, Hao [1 ,2 ,3 ]
Chang, Ting-Chang [4 ]
机构：
[1] Hubei Univ, Hubei Key Lab Ferroelectr & Piezoelect Mat & Devi, Wuhan 430062, Peoples R China
[2] Hubei Univ, Sch Microelect, Wuhan 430062, Peoples R China
[3] Hubei Univ, Fac Phys & Elect Sci, Wuhan 430062, Peoples R China
[4] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan
来源：
CERAMICS INTERNATIONAL | 2021年 / 47卷 / 16期
基金：
中国国家自然科学基金;
关键词：
Ti-doped NbOx; Selector; Forming-free; Ultra-high on-state current; Self-compliance;
D O I：
10.1016/j.ceramint.2021.04.282
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
NbO2-based selectors can effectively suppress cross-talk interference between memory cells in the high-density cross-point nonvolatile memory arrays. By doping titanium into the niobium oxide, the Pt/Ti:NbOx/TiN selector device based on insulator-metal transition (IMT) effect presented typical threshold switching (TS) behavior. Compared with the undoped device (UD), the doped device (DD) performed forming-free, ultra-high on-state current and self-compliance properties. Meanwhile, its performances were stable in 1000 consecutive cycles of TS. Subsequently, the mechanism of the device was understood based on oxygen vacancies adjusted by Ti atom. This device provided an approach to drive memory for V-point structure due to the ultra-high on-state current.
引用
收藏
页码：22677 / 22682
页数：6
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