Silicon-based light emission after ion implantation

被引：38
|
作者：
Kittler, M
Arguirov, T
Fischer, A
Seifert, W
机构：
[1] IHP Microelect, D-15236 Frankfurt, Germany
[2] BTU Cottbus, Lehrstuhl Expt Phys 2, Mat Wissensch, D-03044 Cottbus, Germany
[3] BTU, Joint Lab, IHP, D-03044 Cottbus, Germany
来源：
OPTICAL MATERIALS | 2005年 / 27卷 / 05期
关键词：
D O I：
10.1016/j.optmat.2004.08.045
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Electroluminescence of boron and phosphorus implanted samples has been studied for various implantation and annealing conditions. Phosphorus implantation is found to have a similar effect on light emission as boron implantation. The band-to-band luminescence of phosphorus implanted diodes is observed to increase by more than one order of magnitude upon rising the sample temperature from 80 K to 300 K and a maximum internal quantum efficiency of 2% has been reached at 300 K. The remarkably high band-to-band luminescence is attributed to a high bulk Shockley-Read-Hall lifetime, likely promoted by the gettering action of the implanted phosphorus. The anomalous temperature behavior of the efficiency can be explained by a temperature dependence of the lifetime characteristic of shallow traps. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：967 / 972
页数：6
相关论文
共 50 条
  • [31] Blue emission from silicon-based β-SiC films
    Tan, C
    Wu, XL
    Deng, SS
    Huang, GS
    Liu, XN
    Bao, XM
    PHYSICS LETTERS A, 2003, 310 (2-3) : 236 - 240
  • [32] THE ANNEALING OF LIGHT-ION IMPLANTATION DAMAGE IN SILICON
    JAIN, A
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR): : 326 - 328
  • [33] ANNEALING OF LIGHT ION IMPLANTATION DAMAGE IN SILICON.
    Jain, Amitabh
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1985, B7-8 (pt 1) : 326 - 328
  • [34] Porous silicon-based potassium ion selective electrode
    Zhu, ZQ
    Shi, YL
    Ding, YF
    Zhu, JZ
    Lu, W
    Zi, J
    PROCEEDINGS OF THE IEEE SENSORS 2004, VOLS 1-3, 2004, : 127 - 129
  • [35] Silicon-based nanomaterials for lithium-ion batteries
    Yin YaXia
    Wan LiJun
    Guo YuGuo
    CHINESE SCIENCE BULLETIN, 2012, 57 (32): : 4104 - 4110
  • [36] Silicon-based nanomaterials for lithium-ion batteries
    YIN YaXia
    Science Bulletin, 2012, (32) : 4104 - 4110
  • [37] Ion channel conductance measurements on a silicon-based platform
    Wilk, S. J.
    Aboud, S.
    Petrossian, L.
    Goryll, M.
    Tang, J. M.
    Eisenberg, R. S.
    Saraniti, M.
    Goodnick, S. M.
    Thornton, T. J.
    SEVENTH INTERNATIONAL CONFERENCE ON NEW PHENOMENA IN MESOSCOPIC STRUCTURES AND FIFTH INTERNATIONAL CONFERENCE ON SURFACES AND INTERFACES OF MESOSCOPIC DEVICES, 2005, 2006, 38 : 21 - 24
  • [38] Photonic Crystal and Plasmonic Silicon-Based Light Sources
    Makarova, Maria
    Gong, Yiyang
    Cheng, Szu-Lin
    Nishi, Yoshio
    Yerci, Selcuk
    Li, Rui
    Dal Negro, Luca
    Vuckovic, Jelena
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2010, 16 (01) : 132 - 140
  • [39] Silicon-Based System in Packaging for Light Emitting Diodes
    Cao, Bin
    Yu, Shan
    Zheng, Huai
    Liu, Sheng
    2012 IEEE 62ND ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2012, : 1267 - 1271
  • [40] Silicon-based photonic crystal nanocavity light emitters
    Makarova, Maria
    Vuckovic, Jelena
    Sanda, Hiroyuki
    Nishi, Yoshio
    APPLIED PHYSICS LETTERS, 2006, 89 (22)
12345