Silicon-based light emission after ion implantation

被引：38
|
作者：
Kittler, M
Arguirov, T
Fischer, A
Seifert, W
机构：
[1] IHP Microelect, D-15236 Frankfurt, Germany
[2] BTU Cottbus, Lehrstuhl Expt Phys 2, Mat Wissensch, D-03044 Cottbus, Germany
[3] BTU, Joint Lab, IHP, D-03044 Cottbus, Germany
来源：
OPTICAL MATERIALS | 2005年 / 27卷 / 05期
关键词：
D O I：
10.1016/j.optmat.2004.08.045
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Electroluminescence of boron and phosphorus implanted samples has been studied for various implantation and annealing conditions. Phosphorus implantation is found to have a similar effect on light emission as boron implantation. The band-to-band luminescence of phosphorus implanted diodes is observed to increase by more than one order of magnitude upon rising the sample temperature from 80 K to 300 K and a maximum internal quantum efficiency of 2% has been reached at 300 K. The remarkably high band-to-band luminescence is attributed to a high bulk Shockley-Read-Hall lifetime, likely promoted by the gettering action of the implanted phosphorus. The anomalous temperature behavior of the efficiency can be explained by a temperature dependence of the lifetime characteristic of shallow traps. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：967 / 972
页数：6
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