CHARACTERIZATIONS OF NITROGEN DOPED CUPRIC OXIDE THIN FILMS DEPOSITED ON DIFFERENT SUBSTRATES FOR SOLAR CELL APPLICATIONS

被引：1

作者：

Ooi, Poh Kok ^{[1
]}

Ahmad, Mohd Anas ^{[1
]}

Ng, Sha Shiong ^{[1
]}

Abdullah, Mat Johar ^{[1
]}

机构：

[1] Univ Sains Malaysia, Sch Phys, Nanooptoelect Res & Technol Lab, George Town 11800, Malaysia

来源：

MICRO/NANO SCIENCE AND ENGINEERING | 2014年 / 925卷

关键词：

CuO; nitrogen doped; reactive radio frequency sputtering; nitrous oxide; OPTICAL-PROPERTIES;

D O I：

10.4028/www.scientific.net/AMR.925.469

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work, structural, optical and electrical properties of nitrogen doped (N-doped) cupric oxide (CuO) thin films deposited on < 100 > orientated n-type silicon, glass and polyethylene terephthalate substrates using reactive radio frequency sputtering system were investigated. X-ray diffraction results revealed that all films exhibited monoclinic CuO(-111) and have only slightly different structural properties for various substrates. Field effect scanning electron microscopy shown N-doped CuO on Si and glass are denser than on PET substrates and all have nanotriangle-like structure morphologies. The N-doped CuO thin films have an indirect band gap of around 1.30 eV. The resistively, carrier concentration and hall mobility of the N-doped CuO thin film on glass were 1.05 k Omega.cm, 6.70 x 10(14) cm(-3) and 8.86 cm(2)/V-s respectively. Furthermore, palladium formed ohmic contact characteristics for N-doped CuO on glass and PET but exhibited schottky contact characteristics for N-doped CuO on Si.

引用

页码：469 / 473

页数：5