Vertically aligned growth of ZnO nanonails by nanoparticle-assisted pulsed-laser ablation deposition

被引:38
|
作者
Guo, R. Q.
Nishimura, J.
Ueda, M.
Higashihata, M.
Nakamura, D.
Okada, T.
机构
[1] Kyushu Univ, Grad Sch ISEE, Nishi Ku, Fukuoka 8190395, Japan
[2] Fudan Univ, Adv Mat Lab, Shanghai 200433, Peoples R China
来源
关键词
D O I
10.1007/s00339-007-4174-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Vertically aligned ZnO nanonails have been successfully grown on annealed sapphire substrates at comparatively high gas pressure using catalyst-free nanoparticle-assisted pulsed-laser ablation deposition (NAPLD). The growth behavior of the ZnO nanonails has been investigated by variation of the ablation time, which we name 'isolated particle initiated growth' and a three-step growth mechanism for ZnO nanonails is proposed. SEM analysis reveals that each of the uniquely shaped ZnO nanonails consists of a so-called hexagonal rod-shaped 'root' and a slightly tapered 'stem'. The well-aligned ZnO nanonails exhibit a strong ultraviolet (UV) emission at around 390 nm under room temperature and only negligible visible emission, which indicates that there is a very low concentration of oxygen vacancies in the highly oriented ZnO nanonails. The as-synthesized nanonail arrays on sapphire substrate could offer novel opportunities for both fundamental research and technological applications.
引用
收藏
页码:141 / 144
页数:4
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