Electrical and interfacial characterization of atomic layer deposited high-κ gate dielectrics on GaAs for advanced CMOS devices

被引：126
作者：
Dalapati, Goutam Kumar [1 ]
Tong, Yi
Loh, Wei-Yip
Mun, Hoe Keat
Cho, Byung Jin
机构：
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Silicon Nano Device Lab, Singapore 119260, Singapore
[2] ASTAR, Inst Microelect, Singapore 117685, Singapore
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 08期
关键词：
atomic layer deposition (ALD); frequency dispersion; GaAs MOS; high-kappa dielectric; interface trap; surface passivation; thermal stability;
D O I：
10.1109/TED.2007.901261
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, electrical and interfacial properties of MOS capacitors with atomic layer deposited (ALD) Al2O3, HfO2, and HfAlO gate dielectrics on sulfur-passivated (S-passivated) GaAs substrates were investigated. HfAlO on p-type GaAs has shown superior electrical properties over AL(2)O(3) or HfO2 on GaAs, and it is attributed to the reduction of the Ga-O formation at the interfacial layer. HfAlO on p-type GaAs exhibits the best electrical properties after postdeposition annealing (PDA) at 500 degrees C. It is found that PDA, at above 500 degrees C, causes a significant amount of Ga and As out-diffusion into the high-kappa, dielectric, which degrades the interface, as well as bulk high-kappa properties.
引用
收藏
页码：1831 / 1837
页数：7
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