Performance analysis of several electron/hole transport layers in thin film MAPbI3-based perovskite solar cells: A simulation study

被引：44
作者：
Abnavi, Hamed [1 ]
Maram, Daniyal Khosh [1 ]
Abnavi, Amin [2 ]
机构：
[1] Amirkabir Univ Technol, Tehran Polytech, Dept Elect Engn, Tehran, Iran
[2] Simon Fraser Univ, Sch Engn Sci, 8888 Univ Dr, Burnaby, BC, Canada
来源：
OPTICAL MATERIALS | 2021年 / 118卷
关键词：
Perovskite solar cell; Numerical simulation; Conduction band and valence band offset; Power conversion efficiency; SCAPS-1D; CuAlTe2; NUMERICAL-SIMULATION; INDUCED DEGRADATION; HYSTERESIS; EFFICIENT; OPTIMIZATION; BEHAVIOR; SULFIDE; LIGHT; SNS2;
D O I：
10.1016/j.optmat.2021.111258
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Here, several materials such as CuAlTe2, CuSeCN, V2O5, CuxS, CdSe, SnS2, ZnS, ZnO, and MoSe2 are investigated as potential hole/electron transfer layers (HTL/ETLs) in MAPbI3-based perovskite solar cells (PSCs) by the numerical simulation. The potential HTLs are studied while the ETL is TiO2, and on the other hand, Spiro-MeOTAD HTL is utilized for the potential ETLs. The devices' performance is also investigated by optimizing the absorber thickness, doping density as well as defect density of the absorber and the interface layers. The results show that CuAlTe2 HTL and ZnS ETL are the most suitable materials with the highest power conversion efficiencies (PCEs) of 20.19% and 19.41% by applying optimal thicknesses, respectively. Finally, under the optimized condition, a high PCE of 20.97% is obtained for the FTO/ZnS ETL/MAPbI3/CuAlTe2 HTL/Au PSC, proposing this structure as an excellent configuration for thin film solar cells.
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页数：11
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