Large-scale Ni-doped ZnO nanowire arrays and electrical and optical properties

被引：245

作者：

He, JH

Lao, CS

Chen, LJ ^{[1
]}

Davidovic, D

Wang, ZL

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[2] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

[3] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2005年 / 127卷 / 47期

关键词：

D O I：

10.1021/ja0559193

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Large-scale Ni-doped ZnO nanowire (NW) arrays are grown. The electrical conductivity of a single Ni-doped ZnO NW has been increased for 30 times. The photoluminescence (PL) spectrum of the doped ZnO NWs has a red shift, suggesting possible doping induced band edge bending. The doped NW arrays could be the basis for building integrated nanoscale transistors, sensors, and photodetectors. Copyright © 2005 American Chemical Society.

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页码：16376 / 16377

页数：2

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