Improvement of electrical properties of AlGaN/GaN heterostructures using multiple high-temperature AlN interlayers

被引：0

作者：

Ni, J. Y. ^{[1
]}

Hao, Y. ^{[1
]}

Xue, J. S. ^{[1
]}

Xu, Z. H. ^{[1
]}

Zhang, Z. F. ^{[1
]}

Zhang, J. C. ^{[1
]}

Yang, L. A. ^{[1
]}

Zhang, J. F. ^{[1
]}

机构：

[1] Xidian Univ, Key Lab Wide Band Gap Semicond Mat & Devices, Sch Microelect, Xian 710071, Peoples R China

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 | 2010年 / 7卷 / 7-8期

关键词：

AlGaN/GaN; MOCVD; structure; electrical properties; SAPPHIRE; STRESS; BUFFER;

D O I：

10.1002/pssc.200983427

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

AlGaN/GaN heterostructures with multiple AlN interlayers deposited at a high-temperature (HT) of 900 degrees C were grown by metalorganic chemical vapor deposition. Flat surface with few dark pits was obtained by using multiple HT-AlN interlayers. Hall effect measurements and non-contact sheet resistance mappings demonstrated the improvement of the electrical properties of AlGaN/GaN heterostructure. The sheet carrier density and Hall mobility continuously increased with the increase of the AlN interlayer number. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页数：4

共 8 条

[1] Amano H, 1999, PHYS STATUS SOLIDI B, V216, P683, DOI 10.1002/(SICI)1521-3951(199911)216:1<683::AID-PSSB683>3.0.CO
[2] 2-4
[3] Engineering of an insulating buffer and use of AlN interlayers: two optimisations for AlGaN-GaNHEMT-like structures
Bougrioua, Z
Moerman, I
Nistor, L
Van Daele, B
Monroy, E
Palacios, T
Calle, F
Leroux, M
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2003, 195 (01): : 93 - 100
[4] Control and elimination of cracking of AlGaN using low-temperature AlGaN interlayers
Han, J
Waldrip, KE
Lee, SR
Figiel, JJ
Hearne, SJ
Petersen, GA
Myers, SM
[J]. APPLIED PHYSICS LETTERS, 2001, 78 (01) : 67 - 69
[5] Reduction of etch pit density in organometallic vapor phase epitaxy-grown GaN on sapphire by insertion of a low-temperature-deposited buffer layer between high-temperature-grown GaN
Iwaya, M
Takeuchi, T
Yamaguchi, S
Wetzel, C
Amano, H
Akasaki, I
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (3B): : L316 - L318
[6] Improved AlGaN/GaN high electron mobility transistor using AlN interlayers
Jiménez, A
Bougrioua, Z
Tirado, JM
Braña, AF
Calleja, E
Muñoz, E
Moerman, I
[J]. APPLIED PHYSICS LETTERS, 2003, 82 (26) : 4827 - 4829
[7] Influence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si (111)
Liu, W.
Zhu, J. J.
Jiang, S.
Yang, H.
Wang, J. F.
[J]. APPLIED PHYSICS LETTERS, 2007, 90 (01)
[8] Stress engineering during metalorganic chemical vapor deposition of AlGaN/GaN distributed Bragg reflectors
Waldrip, KE
Han, J
Figiel, JJ
Zhou, H
Makarona, E
Nurmikko, AV
[J]. APPLIED PHYSICS LETTERS, 2001, 78 (21) : 3205 - 3207

← 1 →