Microcavity effects in SiGe/Si heterogeneous nanostructures prepared by electrochemical anodization of SiGe/Si multiple quantum wells

被引：0

作者：

Pan, S. W. ^{[1
]}

Zhou, B. ^{[2
]}

Chen, Rui ^{[1
,3
]}

Chen, S. Y. ^{[1
]}

Li, Cheng ^{[1
]}

Huang, Wei ^{[1
]}

Lai, H. K. ^{[1
]}

Sun, H. D. ^{[3
]}

机构：

[1] Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, Xiamen 361005, Fujian, Peoples R China

[2] Minjiang Univ, Dept Phys & Elect Informat Engn, Fuzhou 350108, Fujian, Peoples R China

[3] Nanyang Technol Univ, Div Phys & Appl Phys, Sch Phys & Math Sci, Singapore 637371, Singapore

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 110卷 / 10期

关键词：

ROOM-TEMPERATURE; SI NANOCRYSTALS; VISIBLE PHOTOLUMINESCENCE; SILICON NANOCRYSTALS; OPTICAL MICROCAVITY; ALLOY NANOCRYSTALS; THERMAL-EXPANSION; POROUS SILICON; MULTILAYERS; COEFFICIENT;

D O I：

10.1063/1.3653960

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the systematic investigations of the microcavity effects from SiGe/Si heterogeneous nanorods (HNRs) prepared by electrochemical anodization of SiGe/Si multiple quantum wells. Visible photoluminescence (PL) emission with narrow bandwidth is observed because of the wavelength selective effect of the microcavity. The resonance of the microcavity is confirmed by the temperature dependent PL measurement, which is consistent with the prediction from the thermo-optic effect. Furthermore, electroluminescence from the ITO/i-SiGe/Si HNR/n(-)-Si diode shows multiple peak emissions under low current density, which is in good agreement with the PL results. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3653960]

引用

页数：5

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