Microcavity effects in SiGe/Si heterogeneous nanostructures prepared by electrochemical anodization of SiGe/Si multiple quantum wells

被引：0

作者：

Pan, S. W. ^{[1
]}

Zhou, B. ^{[2
]}

Chen, Rui ^{[1
,3
]}

Chen, S. Y. ^{[1
]}

Li, Cheng ^{[1
]}

Huang, Wei ^{[1
]}

Lai, H. K. ^{[1
]}

Sun, H. D. ^{[3
]}

机构：

[1] Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, Xiamen 361005, Fujian, Peoples R China

[2] Minjiang Univ, Dept Phys & Elect Informat Engn, Fuzhou 350108, Fujian, Peoples R China

[3] Nanyang Technol Univ, Div Phys & Appl Phys, Sch Phys & Math Sci, Singapore 637371, Singapore

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 110卷 / 10期

关键词：

ROOM-TEMPERATURE; SI NANOCRYSTALS; VISIBLE PHOTOLUMINESCENCE; SILICON NANOCRYSTALS; OPTICAL MICROCAVITY; ALLOY NANOCRYSTALS; THERMAL-EXPANSION; POROUS SILICON; MULTILAYERS; COEFFICIENT;

D O I：

10.1063/1.3653960

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the systematic investigations of the microcavity effects from SiGe/Si heterogeneous nanorods (HNRs) prepared by electrochemical anodization of SiGe/Si multiple quantum wells. Visible photoluminescence (PL) emission with narrow bandwidth is observed because of the wavelength selective effect of the microcavity. The resonance of the microcavity is confirmed by the temperature dependent PL measurement, which is consistent with the prediction from the thermo-optic effect. Furthermore, electroluminescence from the ITO/i-SiGe/Si HNR/n(-)-Si diode shows multiple peak emissions under low current density, which is in good agreement with the PL results. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3653960]

引用

页数：5

共 50 条

[1] Quantum confinement effects in strained SiGe/Si multiple quantum wells
Cheng, Buwen
Li, Daizong
Huang, Changjun
Zhang, Chunhui
Yu, Zhuo
Yu, Jinzhong
Wang, Qiming
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2000, 21 (04): : 313 - 316
[2] Cooperative effects in SiGe/Si quantum wells
Zaitsev, V. V.
Bagaev, V. S.
Burbaev, T. M.
Krivobok, V. S.
Novikov, A. V.
Onishchenko, E. E.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 40 (05): : 1172 - 1174
[3] Collective effects in SiGe/Si quantum wells
Bagaev, V. S.
Krivobok, V. S.
Nikolaev, S. N.
Novikov, A. V.
Onishchenko, E. E.
Zaitsev, V. V.
PHYSICS OF SEMICONDUCTORS, 2009, 1199 : 189 - +
[4] Strain-induced anodization of SiGe/Si multiple layers to form high density SiGe/Si heterogeneous nanorods
Zhou, Bi
Pan, S. W.
Chen, Rui
Chen, S. Y.
Li, Cheng
Lai, H. K.
Yu, J. Z.
Zhu, X. F.
SOLID STATE COMMUNICATIONS, 2009, 149 (43-44) : 1897 - 1901
[5] PHOTOLUMINESCENCE OF SIGE/SI QUANTUM-WELLS PREPARED BY LPCVD
VESCAN, L
SCHMIDT, K
DIEKER, C
TANG, HP
VESCAN, T
LUTH, H
THIN SOLID FILMS, 1992, 222 (1-2) : 5 - 9
[6] Effects of interface disorder on valley splitting in SiGe/Si/SiGe quantum wells
Jiang, Zhengping
Kharche, Neerav
Boykin, Timothy
Klimeck, Gerhard
APPLIED PHYSICS LETTERS, 2012, 100 (10)
[7] Valley splitting theory of SiGe/Si/SiGe quantum wells
Friesen, Mark
Chutia, Sucismita
Tahan, Charles
Coppersmith, S. N.
PHYSICAL REVIEW B, 2007, 75 (11):
[8] Optimized SiGe/Si multiple quantum wells for detector applications
Corbin, E
Jaros, M
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (12) : 1641 - 1649
[9] INFRARED PHOTODETECTORS WITH SIGE/SI MULTIPLE-QUANTUM WELLS
KARUNASIRI, RPG
PARK, JS
WANG, KL
CHUN, SK
OPTICAL ENGINEERING, 1994, 33 (05) : 1468 - 1476
[10] Theoretical investigation of near gap electronic states of Si/SiGe multiple quantum wells on (001)-Si or SiGe substrates
Virgilio, M
Farchioni, R
Grosso, G
JOURNAL OF APPLIED PHYSICS, 2006, 99 (05)

← 1 2 3 4 5 →