Current perpendicular to film plane type giant magnetoresistance effect using a Ag-Mg spacer and Co2Fe0.4Mn0.6Si Heusler alloy electrodes

被引：31
|
作者：
Narisawa, Hiroyuki [1 ]
Kubota, Takahide [1 ]
Takanashi, Koki [1 ]
机构：
[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
来源：
APPLIED PHYSICS EXPRESS | 2015年 / 8卷 / 06期
基金：
日本学术振兴会;
关键词：
AG3MG; CU;
D O I：
10.7567/APEX.8.063008
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The current perpendicular to film plane type giant magnetoresistance (CPP-GMR) effect in Co2Fe0.4Mn0.6Si/Ag83Mg17/Co2Fe0.4Mn0.6Si junctions was investigated. An epitaxially grown 5-nm-thick Ag83Mg17 film having partially ordered L1(2) structure was fabricated on the Co2Fe0.4Mn0.6Si layer by magnetron sputtering. CPP-GMR effects were observed in the submicrometer-sized junctions, and the maximum value of the observed (intrinsic) MR ratio was 40% (48%) at room temperature. The average change in the resistance-area product was 23 m Omega.mu m(2) for the Ag-Mg junctions, which was higher than those of conventional CPP-GMR junctions using a Ag spacer layer. (C) 2015 The Japan Society of Applied Physics
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页数：4
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