Particle-assisted GaxIn1-xP nanowire growth for designed bandgap structures

被引：52

作者：

Jacobsson, D. ^{[1
,4
]}

Persson, J. M. ^{[2
]}

Kriegner, D. ^{[3
]}

Etzelstorfer, T. ^{[3
]}

Wallentin, J. ^{[1
,4
]}

Wagner, J. B. ^{[2
]}

Stangl, J. ^{[3
]}

Samuelson, L. ^{[1
,4
]}

Deppert, K. ^{[1
,4
]}

Borgstrom, M. T. ^{[1
,4
]}

机构：

[1] Lund Univ, SE-22100 Lund, Sweden

[2] Tech Univ Denmark, Ctr Electron Nanoscopy, DK-2800 Lyngby, Denmark

[3] Johannes Kepler Univ Linz, Inst Semicond & Solid State Phys, A-4040 Linz, Austria

[4] Nanometer Struct Consortium, SE-22100 Lund, Sweden

来源：

NANOTECHNOLOGY | 2012年 / 23卷 / 24期

基金：

瑞典研究理事会; 奥地利科学基金会;

关键词：

III-V NANOWIRES; SEMICONDUCTOR NANOWIRES; OPTICAL-PROPERTIES; ALLOYS; GAAS; GAP; PYROLYSIS; KINETICS; EPITAXY; ARRAYS;

D O I：

10.1088/0957-4484/23/24/245601

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Non-tapered vertically straight GaxIn1-xP nanowires were grown in a compositional range from Ga0.2In0.8P to pure GaP in particle-assisted mode by controlling the trimethylindium, trimethylgallium and hydrogen chloride flows in metal-organic vapor phase epitaxy. X-ray energy dispersive spectroscopy in transmission electron microscopy revealed homogeneous radial material composition in single nanowires, whereas variations in the material composition were found along the nanowires. High-resolution x-ray diffraction indicates a variation of the material composition on the order of about 19% measuring an entire sample area, i.e., including edge effects during growth. The non-capped nanowires emit room temperature photoluminescence strongly in the energy range of 1.43-2.16 eV, correlated with the bandgap expected from the material composition.

引用

页数：7

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