Broad-band power amplifier with a novel tunable output matching network

被引：28

作者：

Zhang, HT ^{[1
]}

Gao, H ^{[1
]}

Li, GP ^{[1
]}

机构：

[1] Univ Calif Irvine, Dept Elect & Comp Engn, Integrated Nanosyst Res Facil, Irvine, CA 92697 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2005年 / 53卷 / 11期

关键词：

heterojunction bipolar transistors (HBTs); monolithic microwave integrated circuit (MMIC) power amplifiers; (PAs); power bipolar transistor amplifiers; reconfigurable architectures; semiconductor diode switches; tunable circuits and devices;

D O I：

10.1109/TMTT.2005.858374

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A multiband power amplifier module (PAM) comprised of an InGaP/GaAs heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) broad-band power amplifier (PA) and a tunable multiband output matching circuit is proposed and demonstrated. The three-stage MMIC broad-band PA is realized by using the novel HBT structure and layout, applying broad-band and compensating matching technique in matching network design, adopting power gain predistortion at the first stage, and optimizing the distribution of power gain among stages. The output matching circuit is implemented with parallel inductance-capacitance (LC) tank circuits using p-i-n diodes to control the inductor value. This multiband PAM offers advantages of tunable frequency band, low insertion loss, small size, and high linearity. The multiband PAM biased at 3.5 V demonstrates 27-dB power gain, 30-dBm output power, and higher than 40% power-added efficiency at frequencies covering dual bands from 0.85 to 0.95 GHz and from 1.71 to 1.95 GHz.

引用

页码：3606 / 3614

页数：9

共 28 条

[1] A UNIQUE MMIC BROAD-BAND POWER-AMPLIFIER APPROACH [J].

ARELL, T ;

HONGSMATIP, T .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1993, 28 (10) :1005-1010

[2] Efficiency and linearity improvement in power amplifiers for wireless communications [J].

Asbeck, P ;

Hanington, G ;

Chen, PF ;

Larson, L .

GAAS IC SYMPOSIUM - 20TH ANNUAL, TECHNICAL DIGEST 1998, 1998, :15-18

[3] Application notes - Low loss matching (LLM) design technique for power amplifiers [J].

Bahl, IJ .

IEEE MICROWAVE MAGAZINE, 2004, 5 (04) :66-+

[4]

BOESCH RD, 1999, Patent No. 5969582

[5]

BRANDT RL, 1996, Patent No. 5534837

[6]

CEGIELSKI T, 2004, 15 INT C RAD WIR COM, V1, P107

[7] The feasibility of a variable output matching circuit in a high-power SSPA [J].

Cotler, AC ;

Brown, ER .

RAWCON 2002: IEEE RADIO AND WIRELESS CONFERENCE, PROCEEDINGS, 2002, :189-191

[8] A high average-efficiency SiGe HBT power amplifier for WCDMA handset applications [J].

Deng, JX ;

Gudem, PS ;

Larson, LE ;

Asbeck, PM .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2005, 53 (02) :529-537

[9] Compact dual-fed distributed power amplifier [J].

Eccleston, KW .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2005, 53 (03) :825-831

[10]

HER ML, 2002, 8 INT COMM SYST C SI, P21

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