A 0.5-W 26-31 GHz Power Amplifier Using Pre-matching Technique in 0.15-μm pHEMT Process

被引：0

作者：

Fe, Sin-Jhe ^{[1
]}

Lai, Shih-Hao ^{[1
]}

Chang, Hong-Yeh ^{[1
]}

机构：

[1] Natl Cent Univ, Dept Elect Engn, Taoyuan, Taiwan

来源：

2021 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT) | 2021年

关键词：

GaAs; Ka-band; millimeter-wave; MMIC; power amplifier; pHEMT; pre-matching;

D O I：

10.1109/RFIT52905.2021.9565271

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a 26-31 GHz power amplifier (PA) is presented using a 0.15-mu m GaAs pHEMT process for millimeter-wave communication applications. To extend the bandwidth, the output matching of the presented PA is designed using pre-matching technique. The chip size of the PA is 2x1.8 mm(2). The measured maximum small-signal gain is 11.5 dB with a 3-dB bandwidth from 26 to 31 GHz. When the frequency is 29 GHz, the measured output 1-dB compression point (P-1dB) and saturation power (P-sat) are higher than 26 and 28 dBm, respectively, and the measured maximum power added efficiency is 10%.

引用

页数：2

共 40 条

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