Band gap and electronic properties of wurtzite-structure ZnO co-doped with IIA and IIIA

被引：24

作者：

Han, T. ^{[2
]}

Meng, F. Y. ^{[1
]}

Zhang, S. ^{[2
]}

Cheng, X. M. ^{[2
]}

Oh, J. I. ^{[2
,3
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

[2] Shanghai Jiao Tong Univ, Dept Phys, Solar Energy Inst, Shanghai 200240, Peoples R China

[3] Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 110卷 / 06期

关键词：

TRANSPARENT CONDUCTING ZNO; THIN-FILMS; TRANSITION; SILICON; ENERGY; STATE;

D O I：

10.1063/1.3627233

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the bandgap and electronic properties of wurtzite ZnO doped with elements IIA or/and IIIA, investigated using both theoretical and experimental methods. With wurtzite ZnO co-doped with B and Mg (denoted as ZnO:[B, Mg]) grown via metalorganic chemical vapor deposition, we have observed that both the bandgap and the conductivity can be widely tunable with the doping levels. From first-principles calculations of wurtzite ZnO: Mg, we show that IIA doping elements have a great impact on the widening of the bandgap. Also, from a newly developed calculation method for investigating the electronic properties of wurtzite ZnO:Al, we have found that IIIA doping elements play an important role in tailoring the conductivity. (C) 2011 American Institute of Physics. [doi:10.1063/1.3627233]

引用

页数：6

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