Extreme ultraviolet lithography using small-field exposure tool: Current status

被引：35

作者：

Tawarayama, Kazuo ^{[1
]}

Magoshi, Shunko ^{[1
]}

Tanaka, Yuusuke ^{[1
]}

Shirai, Seiichiro ^{[1
]}

Tanaka, Hiroyuki ^{[1
]}

机构：

[1] Semicond Leading Edge Technol Inc, Tsukuba, Ibaraki 3058569, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 06期

关键词：

extreme ultraviolet lithography; EUVL; resist printing;

D O I：

10.1143/JJAP.47.4866

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The small-field exposure tool (SFET) for extreme ultraviolet (EUV) lithography was manufactured by Canon and EUVA and installed in Selete. It is being used for developing mask, resist, and tool technologies. In this paper, we review the current status of SFET development and present some initial results on lithographic performance and tool stability.

引用

页码：4866 / 4871

页数：6

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