X- and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE

被引：13
|
作者：
Pei, Y. [1 ]
Poblenz, C. [2 ]
Corrion, A. L. [2 ]
Chu, R. [1 ]
Shen, L. [1 ]
Speck, J. S. [2 ]
Mishra, U. K. [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
来源：
ELECTRONICS LETTERS | 2008年 / 44卷 / 09期
关键词：
D O I：
10.1049/el:20080669
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A report is presented on the power performance of deep submicron AlGaN/GaN high electron mobility transistors grown by ammonia molecular beam epitaxy. At 10 GHz, 70% power-added-efficiency (PAE) and 3 W/mm power density were demonstrated at a drain bias of 20 V. At 30 GHz, 31% PAE and 6.5 W/mm power density were achieved at a drain bias of 40 V.
引用
收藏
页码：598 / +
页数：2
相关论文
共 50 条
  • [41] Impact of 2 MeV Proton Irradiation on the Large-Signal Performance of Ka-Band GaN HEMTs
    Anderson, T. J.
    Meyer, D. J.
    Koehler, A. D.
    Roussos, J. A.
    Weaver, B. D.
    Hobart, K. D.
    Kub, F. J.
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2017, 6 (11) : S3110 - S3113
  • [42] RF performance of HVPE-grown AlGaN/GaN HEMTS
    Mastro, MA
    Tsvetkov, D
    Soukhoveev, V
    Usikov, A
    Dmitriev, V
    Luo, B
    Ren, F
    Baik, KH
    Pearton, SJ
    SOLID-STATE ELECTRONICS, 2004, 48 (01) : 179 - 182
  • [43] Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(111) and GaN templates
    Cordier, Y
    Hugues, M
    Semond, F
    Natali, F
    Lorenzini, P
    Bougrioua, Z
    Massies, J
    Frayssinet, E
    Beaumont, B
    Gibart, P
    Faurie, JP
    JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) : 383 - 386
  • [44] Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small Gate Length by the Stepper Lithography for Ka-Band Applications
    Lee, Ming-Wen
    Lin, Yueh-Chin
    Chang, Po-Sheng
    Tsao, Yi-Fan
    Hsu, Heng-Tung
    Dee, Chang-Fu
    Chang, Edward Yi
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2023, 11 : 311 - 318
  • [45] Evaluation of Electromagnetic Compatibility of Onboard X- and Ka-Band Radars
    Kanashchenkov, A. I.
    Ponomarev, L. I.
    Vasin, A. A.
    Terekhin, O. V.
    JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS, 2018, 63 (06) : 537 - 549
  • [46] Attenuation factor for X- and Ka-band near sea surface
    Razskazovsky, VB
    Pedenko, YA
    Logvinov, YF
    MSMW'98 - SYMPOSIUM PROCEEDINGS, VOLS 1 AND 2, 1998, : 455 - 457
  • [47] Evaluation of Electromagnetic Compatibility of Onboard X- and Ka-Band Radars
    A. I. Kanashchenkov
    L. I. Ponomarev
    A. A. Vasin
    O. V. Terekhin
    Journal of Communications Technology and Electronics, 2018, 63 : 537 - 549
  • [48] GaN Schottky Metal-Semiconductor-Metal UV Photodetectors on Si(111) Grown by Ammonia-MBE
    Ravikiran, Lingaparthi
    Radhakrishnan, K.
    Dharmarasu, Nethaji
    Agrawal, Manvi
    Wang, Zilong
    Bruno, Annalisa
    Soci, Cesare
    Lihuang, Tng
    Ang, Kian Siong
    IEEE SENSORS JOURNAL, 2017, 17 (01) : 72 - 77
  • [49] Broadband High-Efficiency Power Amplifiers in 150 nm AlGaN/GaN Technology at Ka-Band
    Samis, S.
    Friesicke, C.
    Maier, T.
    Quay, R.
    Jacob, A. F.
    2020 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), 2020, : 260 - 262
  • [50] Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE
    A. N. Alekseev
    S. B. Aleksandrov
    A. É. Byrnaz
    L. É. Velikovskii
    I. É. Velikovskii
    D. M. Krasovitskii
    M. V. Pavlenko
    S. I. Petrov
    Yu. V. Pogorel’skii
    I. A. Sokolov
    M. A. Sokolov
    M. V. Stepanov
    A. G. Tkachenko
    A. P. Shkurko
    V. P. Chalyi
    Technical Physics Letters, 2005, 31 : 864 - 867
12345