X- and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE

被引：13
|
作者：
Pei, Y. [1 ]
Poblenz, C. [2 ]
Corrion, A. L. [2 ]
Chu, R. [1 ]
Shen, L. [1 ]
Speck, J. S. [2 ]
Mishra, U. K. [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
来源：
ELECTRONICS LETTERS | 2008年 / 44卷 / 09期
关键词：
D O I：
10.1049/el:20080669
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A report is presented on the power performance of deep submicron AlGaN/GaN high electron mobility transistors grown by ammonia molecular beam epitaxy. At 10 GHz, 70% power-added-efficiency (PAE) and 3 W/mm power density were demonstrated at a drain bias of 20 V. At 30 GHz, 31% PAE and 6.5 W/mm power density were achieved at a drain bias of 40 V.
引用
收藏
页码：598 / +
页数：2
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