X- and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE

被引：13

作者：

Pei, Y. ^{[1
]}

Poblenz, C. ^{[2
]}

Corrion, A. L. ^{[2
]}

Chu, R. ^{[1
]}

Shen, L. ^{[1
]}

Speck, J. S. ^{[2
]}

Mishra, U. K. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

ELECTRONICS LETTERS | 2008年 / 44卷 / 09期

关键词：

D O I：

10.1049/el:20080669

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A report is presented on the power performance of deep submicron AlGaN/GaN high electron mobility transistors grown by ammonia molecular beam epitaxy. At 10 GHz, 70% power-added-efficiency (PAE) and 3 W/mm power density were demonstrated at a drain bias of 20 V. At 30 GHz, 31% PAE and 6.5 W/mm power density were achieved at a drain bias of 40 V.

引用

页码：598 / +

页数：2

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