Low frequency noise in SOI transistors

With the inherent advantages in SOI CMOS technology, minimizing DC and switching floating body effects have enabled high speed digital processors with more than a 25% improvement over bulk silicon CMOS design. Currently, there is a need for a more comprehensive understanding of AC characteristics on SOI CMOS technology for mixed-mode baseband and RF (radio frequency) applications. The objective of this paper is to present a study of unique AC floating body effects and the resultant low-frequency noise overshoot phenomenon in SOI CMOS technology. Further study of their impact on the RF arena will also be discussed.