Low frequency noise in SOI transistors

被引：0
|
作者：
Tseng, T [1 ]
Woo, JCS [1 ]
机构：
[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
来源：
Noise in Devices and Circuits III | 2005年 / 5844卷
关键词：
D O I：
10.1117/12.609628
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
With the inherent advantages in SOI CMOS technology, minimizing DC and switching floating body effects have enabled high speed digital processors with more than a 25% improvement over bulk silicon CMOS design. Currently, there is a need for a more comprehensive understanding of AC characteristics on SOI CMOS technology for mixed-mode baseband and RF (radio frequency) applications. The objective of this paper is to present a study of unique AC floating body effects and the resultant low-frequency noise overshoot phenomenon in SOI CMOS technology. Further study of their impact on the RF arena will also be discussed.
引用
收藏
页码：23 / 30
页数：8
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