Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices

被引：26

作者：

Deng, Shaoren ^{[1
]}

Xie, Qi ^{[1
]}

Deduytsche, Davy ^{[1
]}

Schaekers, Marc ^{[2
]}

Lin, Dennis ^{[2
]}

Caymax, Matty ^{[2
]}

Delabie, Annelies ^{[2
]}

Van den Berghe, Sven ^{[3
]}

Qu, Xinping ^{[4
]}

Detavernier, Christophe ^{[1
]}

机构：

[1] Univ Ghent, Dept Solid State Sci, B-9000 Ghent, Belgium

[2] IMEC, B-3001 Louvain, Belgium

[3] CEN SCK, B-2400 Mol, Belgium

[4] Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 05期

基金：

欧洲研究理事会;

关键词：

ELECTRICAL-PROPERTIES; GATE; PASSIVATION;

D O I：

10.1063/1.3622649

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metal-oxide-semiconductor capacitor was fabricated using in situ O-2 plasma passivation and subsequent deposition of a HfO2 high-k gate stack on Ge. By extracting flat band voltages from capacitors with different equivalent oxide thicknesses (EOT), the effect of forming gas annealing (FGA) and O-2 ambient annealing on the fixed charge was systematically investigated. The O-2 ambient annealing is more effective than FGA as it reduced fixed charge density to 8.3 x 10(11) cm(-2) compared to 4.5 x 10(12) cm(-2) for at the same thermal budget and showed no degradation of EOT. Further, the distribution of fixed charges in gate stack was discussed in detail. (C) 2011 American Institute of Physics. [doi:10.1063/1.3622649]

引用

页数：3

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