High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells

被引：15

作者：

He, Rongrui ^{[1
,2
]}

Day, Todd D. ^{[1
,2
]}

Sparks, Justin R. ^{[1
,2
,4
]}

Sullivan, Nichole F. ^{[1
,2
]}

Badding, John V. ^{[1
,2
,3
]}

机构：

[1] Penn State Univ, Dept Chem, University Pk, PA 16802 USA

[2] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

[3] Penn State Univ, Dept Phys, Dept Mat Sci & Engn, 104 Davey Lab, University Pk, PA 16802 USA

[4] Muhlenberg Coll, Dept Chem, Allentown, PA 18104 USA

来源：

ADVANCED MATERIALS | 2016年 / 28卷 / 28期

基金：

美国国家科学基金会;

关键词：

NANOPARTICLE FORMATION; THERMAL-DECOMPOSITION; ENERGY-CONVERSION; CVD PROCESSES; SILANE; GROWTH; METAMATERIALS; CHEMISTRY; MECHANISM; KINETICS;

D O I：

10.1002/adma.201600415

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Thin films of hydrogenated amorphous silicon can be produced at MPa pressures from silane without the use of plasma at temperatures as low as 345 degrees C. High pressure chemical vapor deposition may open a new way to low cost deposition of amorphous silicon solar cells and other thin film structures over very large areas in very compact, simple reactors. [GRAPHICS] .

引用

页码：5939 / +

页数：5

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