Electron mobility in multi-FinFET with a (111) channel surface fabricated by orientation-dependent wet etching

被引：5

作者：

Liu, YX

Sugimata, E

Masahara, M

Endo, K

Ishii, K

Matsukawa, T

Takashima, H

Yamauchi, H

Suzuki, E

机构：

来源：

MICROELECTRONIC ENGINEERING | 2005年 / 80卷

关键词：

FinFET; double-gate MOSFET; orientation-dependent wet etching; rectangular cross-section Si-fin; mobility;

D O I：

10.1016/j.mee.2005.04.014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents, for the first time, the experimental electron mobility in FinFETs with a (111) channel surface fabricated by the orientation-dependent wet etching. The maximum electron mobility (u(eff)) is around 300-cm(2)/V-s, which is close to that in the (111) bulk MOSFETs. Moreover, the value of u(eff) is comparable or better than the reported ones in the usual FinFETs with a (I 10) channel surface prepared with careful surface treatments. This result indicates that the quality and channel surface roughness of the Si-fins by the orientation-dependent wet etching are much better than those fabricated by the conventional reactive ion etching (RIE) process.

引用

页码：390 / 393

页数：4

共 10 条

[1] Choi YK, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P259, DOI 10.1109/IEDM.2002.1175827
[2] Hisamoto D., 1998, IEDM, P833
[3] Liu YX, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P986
[4] Systematic electrical characteristics of ideal rectangular cross section Si-Fin channel double-gate MOSFETs fabricated by a wet process
Liu, YX
Ishii, K
Tsutsumi, T
Masahara, M
Sekigawa, T
Sakamoto, K
Takashima, H
Yamauchi, H
Suzuki, E
[J]. IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2003, 2 (04) : 198 - 204
[5] A highly threshold voltage-controllable 4T FinFET with an 8.5-nm-thick Si-Fin channel
Liu, YX
Masahara, M
Ishii, K
Sekigawa, T
Takashima, H
Yamauchi, H
Suzuki, E
[J]. IEEE ELECTRON DEVICE LETTERS, 2004, 25 (07) : 510 - 512
[6] Ideal rectangular cross-section Si-Fin channel double-gate MOSFETs fabricated using orientation-dependent wet etching
Liu, YX
Ishii, K
Tsutsumi, T
Masahara, M
Suzuki, E
[J]. IEEE ELECTRON DEVICE LETTERS, 2003, 24 (07) : 484 - 486
[7] Masahara M, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P949, DOI 10.1109/IEDM.2002.1175994
[8] CALCULATED THRESHOLD-VOLTAGE CHARACTERISTICS OF AN XMOS TRANSISTOR HAVING AN ADDITIONAL BOTTOM GATE
SEKIGAWA, T
HAYASHI, Y
[J]. SOLID-STATE ELECTRONICS, 1984, 27 (8-9) : 827 - 828
[9] ON THE UNIVERSALITY OF INVERSION LAYER MOBILITY IN SI MOSFETS .2. EFFECTS OF SURFACE ORIENTATION
TAKAGI, S
TORIUMI, A
IWASE, M
TANGO, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (12) : 2363 - 2368
[10] Yu B, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P251, DOI 10.1109/IEDM.2002.1175825

← 1 →