Fe doping for making resistive GaN layers with low dislocation density;: consequence on HEMTs

被引：23

作者：

Bougrioua, Z ^{[1
]}

Azize, M ^{[1
]}

Jimenez, A ^{[1
]}

Braña, AF ^{[1
]}

Lorenzini, P ^{[1
]}

Beaumont, B ^{[1
]}

Muñoz, E ^{[1
]}

Gibart, P ^{[1
]}

机构：

[1] CNRS, CRHEA, F-06560 Valbonne, France

来源：

Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7 | 2005年 / 2卷 / 07期

关键词：

D O I：

10.1002/pssc.200461588

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Highly resistive GaN (> 10(8) Omega gamma) is grown by MOVPE on sapphire with dislocation density in the range 10(8) to 8x10(8) cm(-2), using Fe modulation doping. High mobility 2DEGs are created at AlGaN/GaN:Fe interface for moderate Al composition: 2200 cm(2)/V/s at n(s) similar to 7.6x10(12) cm(-2). Good DC and RF small signal behaviour could be obtained in HEMTs processed on structures with less dislocated GaN:Fe template: I-DS(max) =1.28 A/mm, g(m)(max) similar to 290 mS/mrn and f(T) similar to 23 GHz were measured for 0.2 mu m transistors.

引用

页码：2424 / 2428

页数：5

共 9 条

[1]

AZIZE M, 2005, PHYS STAT SOL

[2] Engineering of an insulating buffer and use of AlN interlayers: two optimisations for AlGaN-GaNHEMT-like structures [J].