Plasma oxidation of Al thin films on Si substrates

In this study, Al thin films deposited on silicon wafers by direct current rnagnetron sputtering were oxidized under radio frequency 13.56 MHz O-2 plasma at temperatures up to 550 degrees C. During oxidation, plasma powers as well as oxidation temperature and time were varied to investigate the oxidation behavior of the Al films. X-ray photoelectron spectroscopy and Auger electron spectroscopy results show that the apparent alumina could be observed after O-2 plasma treatment with powers above 200 W as well as at temperatures above 250 degrees C. However, no alumina increment could be discerned after individual either heat treatment at 550 degrees C or plasma treatment at room temperature. The thickness of alumina layers increased remarkably with plasma power and could reach about 60 mm when undergone 400 W 0, plasma treatment at 550 degrees C for 2 h. Moreover, the thickness of alumina increased parabolically with time during plasma oxidation aided by thermal treatment. The deduced activation energy of such plasma oxidation was 19.1 +/- 0.5 W/mol. (C) 2007 Elsevier B.V. All rights reserved.