A High Power-density and High Efficiency Insulated Metal Substrate Based GaN HEMT Power Module

被引：0
|
作者：
Lu, Juncheng [1 ]
Chen, Di [1 ]
Yushyna, Lyubov [1 ]
机构：
[1] GaN Syst Inc, Ottawa, ON, Canada
来源：
2017 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE) | 2017年
关键词：
GaN HEMT; Power Module; parasitics; Thermal;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Industry is adopting GaN HEMTs in 3kW or higher power systems, which exhibit excellent figure of merit compared to conventional Silicon devices. Thermal considerations as well as circuit parasitics in high power and high density GaN-based systems play a significant role in achieving overall performance. A high density and high efficiency Insulated Metal Substrate (IMS) based GaN HEMT power module design is proposed in this paper. FEM simulation and experiments are performed to verify the thermal and electrical performance. Excellent consistency has been shown between the simulation and experimental results.
引用
收藏
页码：3654 / 3658
页数：5
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